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Beilstein J. Nanotechnol. 2020, 11, 1329–1335, doi:10.3762/bjnano.11.117
Figure 1: Experimental design and basic electrical characteristics. (a) Sketch demonstrating the irradiation ...
Figure 2: Effects of changing the irradiated area on the performance of monolayer MoS2 FETs. Note that all th...
Figure 3: (a) Example SEM images of electrode non-touching (NT) and touching (T) devices with a similar IR. T...
Beilstein J. Nanotechnol. 2012, 3, 579–585, doi:10.3762/bjnano.3.67
Figure 1: (a) SEM image of the silicon lamella (sample 1) after FIB preparation. (b) HAADF TEM image of the s...
Figure 2: HRTEM (a) and diffraction (b) information from gallium finished region. HRTEM (c) and diffraction i...
Figure 3: (a) HAADF image of the TiO2 sample (sample 2) after FIB lift-out. (b) HAADF image of the sample aft...
Figure 4: (a) SEM image of the silicon lamella (sample 3) after FIB lift-out and a 5 keV gallium ion polish. ...
Figure 5: Thickness map of the modified region. The arrow indicates the area along which the integrated inten...
Figure 6: (a) EELS spectra of an unmodified area of silicon (solid black line), the HIM fabricated wedge mark...